SGT MOSFET (Low Rds(on) 1.8mΩ, Fast Switching) in DFN5*6-8L

GT025N06AD5 is produced with advanced SGT (Shield Gate Trench MOSFET) technology with extremely low Rsp. It especially lowers the miller capacitor and greatly reduces switching loss. It improves the avalanche while optimizes Rdson and Qg.

Product Highlights:

 Advanced SGT technology, extremely low Rdson, excellent switching  characteristics, Better FOM, Better power dissipation, Less conduction loss.

 Comparing with the normal trench technology, the SGT technology optimizes the parameters of Ciss/Qg and leaves more space for MOSFET driver designing and fabricating.

 Better reliability by optimizing the EAS characteristics to deal with the exceptional working states in the application.

Product Parametrics:

Applications:

                            BMS                                                             Electric tools                                        LED Drive Power Supplies                           5G Communication Power Supply