SiC MOSFET
Silicon Carbide (SiC) MOSFETs are advanced power devices designed for high-performance applications. They are particularly attractive for high-power and high-frequency applications due to their superior characteristics. GOFORD SiC mosfet has higher blocking voltage and thermal conductivity, lower state resistance and higher breakdown strength.
Compliance
AutomotiveRoHSPb-FreeHalogen FreePackage
TO-247-4Channel
NESD Diode
NOVds
(V)6501200Vgs
(V)-10/+25-8/+19-0.4Id
(A)19394250516970Vgs(th)
min (V)1.8Vgs(th)
max (V)3.53.63.7Rds(ON)
mΩ(max)
@Vgs=20V445385190Rds(ON)
mΩ(max)
@Vgs=15V416078Tj (max)
(°C)175
| Part Number | Compliance | Package | Channel | ESD Diode | Vds (V) | Vgs (V) | Id (A) | Vgs(th) min (V) | Vgs(th) max (V) | Rds(ON) mΩ(max) @Vgs=20V | Rds(ON) mΩ(max) @Vgs=15V | Tj (max) (°C) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RH | TO-247-4 | N | NO | 650 | -8/+19 | 42 | 1.8 | 3.6 | 78 | 175 | ||
| RH | TO-247-4 | N | NO | 650 | -8/+19 | 51 | 1.8 | 3.6 | 60 | 175 | ||
| RH | TO-247-4 | N | NO | 650 | -8/+19 | 70 | 1.8 | 3.6 | 41 | 175 | ||
| RH | TO-247-4 | N | NO | 1200 | -10/+25 | 19 | 1.8 | 3.6 | 190 | 175 | ||
| ARH | TO-247-4 | N | NO | 1200 | -0.4 | 39 | 1.8 | 3.6 | 85 | 175 | ||
| RH | TO-247-4 | N | NO | 1200 | -8/+19 | 50 | 1.8 | 3.7 | 53 | 175 | ||
| RH | TO-247-4 | N | NO | 1200 | -10/+25 | 69 | 1.8 | 3.5 | 44 | 175 |
